Investigation of the current break-down phenomena in solar cells

Observed reverse current-voltage characteristics of the single crystal silicon and gallium arsenide solar cells have been analyzed. Physical mechanisms behind the junction break-down in silicon cells and current break-down in gallium arsenide cells have been identified. Preliminary estimates of the...

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Veröffentlicht in:	Solar energy materials and solar cells 1996-01, Vol.43 (1), p.29-36
Hauptverfasser:	Sharma, S.K., Srinivasamurthy, N., Agrawal, B.L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Current break-down Diffusion capacitance Electric breakdown Electric fault currents Electron tunneling Interband impact generation Junction break-down Quantum mechanical tunneling Semiconducting gallium arsenide Semiconducting silicon compounds Single crystals
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Beschreibung
Zusammenfassung:	Observed reverse current-voltage characteristics of the single crystal silicon and gallium arsenide solar cells have been analyzed. Physical mechanisms behind the junction break-down in silicon cells and current break-down in gallium arsenide cells have been identified. Preliminary estimates of the diffusion capacitance in GaAs cells have been presented.
ISSN:	0927-0248 1879-3398
DOI:	10.1016/0927-0248(95)00154-9