Ultraviolet light emission from oxidized porous silicon

Ultraviolet light emission from oxidized porous silicon

Ultraviolet light emission with wavelength of 360–370 nm has been observed from porous silicon (PS) samples properly oxidized at high temperature. The intensity rather than the peak location of ultraviolet light varies with anodization conditions and the oxidation at 1150°C can severely reduce the i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Solid state communications 1996, Vol.97 (3), p.221-224
Hauptverfasser: Lin, J., Yao, G.Q., Duan, J.Q., Qin, G.G.
Format: Artikel
Sprache:eng
Schlagworte:
Anodic oxidation
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Elemental semiconductors
Emission spectroscopy
Exact sciences and technology
Heat treatment
High temperature operations
Luminescence
Nitrogen
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Porosity
Porous silicon
Scanning electron microscopy
Silicon wafers
Ultraviolet radiation
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Ultraviolet light emission with wavelength of 360–370 nm has been observed from porous silicon (PS) samples properly oxidized at high temperature. The intensity rather than the peak location of ultraviolet light varies with anodization conditions and the oxidation at 1150°C can severely reduce the intensity of ultraviolet light, but the effect of the latter is stronger than that of the former. It is concluded that both the nanoscale silicon particles and the luminescence centers in Si oxide layers covering them play the key role in the ultraviolet light emission from PS.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(95)00650-8