Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes

We have developed a broken-gap (type II) quantum well active region for midwave infrared interband lasers which exhibits a significantly increased Auger lifetime over that of previous designs.

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2000-05, Vol.18 (3), p.1623-1627
Hauptverfasser:	Hasenberg, T. C., Day, P. S., Shaw, E. M., Magarrell, D. J., Olesberg, J. T., Yu, C., Boggess, Thomas F., Flátte, M. E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Energy gap Infrared devices Molecular beam epitaxy Optical parametric oscillators Semiconductor device manufacture Semiconductor growth Semiconductor quantum wells Semiconductor superlattices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We have developed a broken-gap (type II) quantum well active region for midwave infrared interband lasers which exhibits a significantly increased Auger lifetime over that of previous designs.
ISSN:	0734-211X 1071-1023 1520-8567
DOI:	10.1116/1.591440