Radiation degradation of large fluence irradiated space silicon solar cells
In this paper, we present data on the electrical properties of 50 gm thick space silicon BSFR cells irradiated with 10 MeV protons with a fluence exceeding 1 x 10 13 p/cm 2 and irradiated with 1 MeV electrons with a fluence exceeding 1 x 10 16 e/cm 2, and discuss the anomalous degradation which was...
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| Veröffentlicht in: | Solar energy materials and solar cells 1998, Vol.50 (1), p.331-338 |
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| container_title | Solar energy materials and solar cells |
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| creator | Hisamatsu, Tadashi Kawasaki, Osamu Matsuda, Sumio Nakao, Tetsuya Wakow, Yoshihito |
| description | In this paper, we present data on the electrical properties of 50 gm thick space silicon BSFR cells irradiated with 10 MeV protons with a fluence exceeding 1 x 10
13 p/cm
2 and irradiated with 1 MeV electrons with a fluence exceeding 1 x 10
16 e/cm
2, and discuss the anomalous degradation which was found in these large-fluence regions. These data show an increase of saturation current density and a decrease of diffusion voltage of the pn junction, and a decrease of majority carrier density and an increase of series resistance of the p-substrate as a result of the formation of a large amount of carrier traps by the large-fluence irradiation. |
| doi_str_mv | 10.1016/S0927-0248(97)00163-3 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_745648050</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0927024897001633</els_id><sourcerecordid>26515091</sourcerecordid><originalsourceid>FETCH-LOGICAL-c412t-73a6a92796226ea5de4586a0ae35bddaa78039fd5368a49ac97483621ead54583</originalsourceid><addsrcrecordid>eNqFkEtLxDAQx4MouK5-BKEnH4dqHk2anEQWX7gg-DiHMZkukbpdk67gtzfdikc9_YfhN8PMj5BDRs8YZer8iRpel5RX-sTUpzS3RCm2yITp2pRCGL1NJr_ILtlL6Y1SypWoJuT-EXyAPnTLwuMigh_rrilaiAssmnaNS4dFiHEDoi_SCnIjhTa4TKYug4XDtk37ZKeBNuHBT07Jy_XV8-y2nD_c3M0u56WrGO_LWoCCfI5RnCsE6bGSWgEFFPLVe4BaU2EaL4XSUBlwpq60UJwheJlRMSXH495V7D7WmHr7HtJwASyxWydbV1JVmkqayaM_Sa4kk9SwDMoRdLFLKWJjVzG8Q_yyjNpBst1ItoNBa3IOkq3IcxfjHOZ_PwNGm1wYhPkQ0fXWd-GfDd-vaINs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>26515091</pqid></control><display><type>article</type><title>Radiation degradation of large fluence irradiated space silicon solar cells</title><source>Elsevier ScienceDirect Journals</source><creator>Hisamatsu, Tadashi ; Kawasaki, Osamu ; Matsuda, Sumio ; Nakao, Tetsuya ; Wakow, Yoshihito</creator><creatorcontrib>Hisamatsu, Tadashi ; Kawasaki, Osamu ; Matsuda, Sumio ; Nakao, Tetsuya ; Wakow, Yoshihito</creatorcontrib><description>In this paper, we present data on the electrical properties of 50 gm thick space silicon BSFR cells irradiated with 10 MeV protons with a fluence exceeding 1 x 10
13 p/cm
2 and irradiated with 1 MeV electrons with a fluence exceeding 1 x 10
16 e/cm
2, and discuss the anomalous degradation which was found in these large-fluence regions. These data show an increase of saturation current density and a decrease of diffusion voltage of the pn junction, and a decrease of majority carrier density and an increase of series resistance of the p-substrate as a result of the formation of a large amount of carrier traps by the large-fluence irradiation.</description><identifier>ISSN: 0927-0248</identifier><identifier>EISSN: 1879-3398</identifier><identifier>DOI: 10.1016/S0927-0248(97)00163-3</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Carrier concentration ; Current density ; Degradation ; Electric resistance ; Electron irradiation ; Electrons ; Irradiation ; Proton irradiation ; Protons ; Radiation degradation ; Semiconductor junctions ; Silicon solar cell ; Space applications ; Space solar cell ; Substrates</subject><ispartof>Solar energy materials and solar cells, 1998, Vol.50 (1), p.331-338</ispartof><rights>1998</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c412t-73a6a92796226ea5de4586a0ae35bddaa78039fd5368a49ac97483621ead54583</citedby><cites>FETCH-LOGICAL-c412t-73a6a92796226ea5de4586a0ae35bddaa78039fd5368a49ac97483621ead54583</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/S0927-0248(97)00163-3$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,777,781,3537,4010,27904,27905,27906,45976</link.rule.ids></links><search><creatorcontrib>Hisamatsu, Tadashi</creatorcontrib><creatorcontrib>Kawasaki, Osamu</creatorcontrib><creatorcontrib>Matsuda, Sumio</creatorcontrib><creatorcontrib>Nakao, Tetsuya</creatorcontrib><creatorcontrib>Wakow, Yoshihito</creatorcontrib><title>Radiation degradation of large fluence irradiated space silicon solar cells</title><title>Solar energy materials and solar cells</title><description>In this paper, we present data on the electrical properties of 50 gm thick space silicon BSFR cells irradiated with 10 MeV protons with a fluence exceeding 1 x 10
13 p/cm
2 and irradiated with 1 MeV electrons with a fluence exceeding 1 x 10
16 e/cm
2, and discuss the anomalous degradation which was found in these large-fluence regions. These data show an increase of saturation current density and a decrease of diffusion voltage of the pn junction, and a decrease of majority carrier density and an increase of series resistance of the p-substrate as a result of the formation of a large amount of carrier traps by the large-fluence irradiation.</description><subject>Carrier concentration</subject><subject>Current density</subject><subject>Degradation</subject><subject>Electric resistance</subject><subject>Electron irradiation</subject><subject>Electrons</subject><subject>Irradiation</subject><subject>Proton irradiation</subject><subject>Protons</subject><subject>Radiation degradation</subject><subject>Semiconductor junctions</subject><subject>Silicon solar cell</subject><subject>Space applications</subject><subject>Space solar cell</subject><subject>Substrates</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLxDAQx4MouK5-BKEnH4dqHk2anEQWX7gg-DiHMZkukbpdk67gtzfdikc9_YfhN8PMj5BDRs8YZer8iRpel5RX-sTUpzS3RCm2yITp2pRCGL1NJr_ILtlL6Y1SypWoJuT-EXyAPnTLwuMigh_rrilaiAssmnaNS4dFiHEDoi_SCnIjhTa4TKYug4XDtk37ZKeBNuHBT07Jy_XV8-y2nD_c3M0u56WrGO_LWoCCfI5RnCsE6bGSWgEFFPLVe4BaU2EaL4XSUBlwpq60UJwheJlRMSXH495V7D7WmHr7HtJwASyxWydbV1JVmkqayaM_Sa4kk9SwDMoRdLFLKWJjVzG8Q_yyjNpBst1ItoNBa3IOkq3IcxfjHOZ_PwNGm1wYhPkQ0fXWd-GfDd-vaINs</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Hisamatsu, Tadashi</creator><creator>Kawasaki, Osamu</creator><creator>Matsuda, Sumio</creator><creator>Nakao, Tetsuya</creator><creator>Wakow, Yoshihito</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7TC</scope></search><sort><creationdate>1998</creationdate><title>Radiation degradation of large fluence irradiated space silicon solar cells</title><author>Hisamatsu, Tadashi ; Kawasaki, Osamu ; Matsuda, Sumio ; Nakao, Tetsuya ; Wakow, Yoshihito</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c412t-73a6a92796226ea5de4586a0ae35bddaa78039fd5368a49ac97483621ead54583</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Carrier concentration</topic><topic>Current density</topic><topic>Degradation</topic><topic>Electric resistance</topic><topic>Electron irradiation</topic><topic>Electrons</topic><topic>Irradiation</topic><topic>Proton irradiation</topic><topic>Protons</topic><topic>Radiation degradation</topic><topic>Semiconductor junctions</topic><topic>Silicon solar cell</topic><topic>Space applications</topic><topic>Space solar cell</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hisamatsu, Tadashi</creatorcontrib><creatorcontrib>Kawasaki, Osamu</creatorcontrib><creatorcontrib>Matsuda, Sumio</creatorcontrib><creatorcontrib>Nakao, Tetsuya</creatorcontrib><creatorcontrib>Wakow, Yoshihito</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Mechanical Engineering Abstracts</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hisamatsu, Tadashi</au><au>Kawasaki, Osamu</au><au>Matsuda, Sumio</au><au>Nakao, Tetsuya</au><au>Wakow, Yoshihito</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Radiation degradation of large fluence irradiated space silicon solar cells</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>1998</date><risdate>1998</risdate><volume>50</volume><issue>1</issue><spage>331</spage><epage>338</epage><pages>331-338</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>In this paper, we present data on the electrical properties of 50 gm thick space silicon BSFR cells irradiated with 10 MeV protons with a fluence exceeding 1 x 10
13 p/cm
2 and irradiated with 1 MeV electrons with a fluence exceeding 1 x 10
16 e/cm
2, and discuss the anomalous degradation which was found in these large-fluence regions. These data show an increase of saturation current density and a decrease of diffusion voltage of the pn junction, and a decrease of majority carrier density and an increase of series resistance of the p-substrate as a result of the formation of a large amount of carrier traps by the large-fluence irradiation.</abstract><pub>Elsevier B.V</pub><doi>10.1016/S0927-0248(97)00163-3</doi><tpages>8</tpages></addata></record> |
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| ispartof | Solar energy materials and solar cells, 1998, Vol.50 (1), p.331-338 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Carrier concentration Current density Degradation Electric resistance Electron irradiation Electrons Irradiation Proton irradiation Protons Radiation degradation Semiconductor junctions Silicon solar cell Space applications Space solar cell Substrates |
| title | Radiation degradation of large fluence irradiated space silicon solar cells |
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