Radiation degradation of large fluence irradiated space silicon solar cells

In this paper, we present data on the electrical properties of 50 gm thick space silicon BSFR cells irradiated with 10 MeV protons with a fluence exceeding 1 x 10 13 p/cm 2 and irradiated with 1 MeV electrons with a fluence exceeding 1 x 10 16 e/cm 2, and discuss the anomalous degradation which was found in these large-fluence regions. These data show an increase of saturation current density and a decrease of diffusion voltage of the pn junction, and a decrease of majority carrier density and an increase of series resistance of the p-substrate as a result of the formation of a large amount of carrier traps by the large-fluence irradiation.