Convection and segregation during growth of Ge and InSb crystals by the submerged heater method

The submerged heater method was used to grow doped InSb and Ge crystals. The axial distribution of the dopants was found to be similar to space grown crystals. The ideal, diffusion-controlled steady-state segregation of Te-doped InSb was achieved for the first time in the terrestrial environment. On...

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Veröffentlicht in:	Journal of crystal growth 1993-03, Vol.128 (1), p.201-206
Hauptverfasser:	Ostrogorsky, Aleksandar G., Sell, H.J., Scharl, S., Müller, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Composition Cross-disciplinary physics: materials science rheology Crystals Diffusion Exact sciences and technology Growth from melts zone melting and refining Heat convection Materials science Methods of crystal growth physics of crystal growth Physics Segregation (metallography) Semiconducting antimony compounds Semiconducting germanium Semiconducting indium compounds Semiconductor doping Tellurium
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Beschreibung
Zusammenfassung:	The submerged heater method was used to grow doped InSb and Ge crystals. The axial distribution of the dopants was found to be similar to space grown crystals. The ideal, diffusion-controlled steady-state segregation of Te-doped InSb was achieved for the first time in the terrestrial environment. One Sb-doped Ge single crystal was grown under steady-state conditions using a zone-leveling procedure.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/0022-0248(93)90319-R