Low temperature remote plasma cleaning of the fluorocarbon and polymerized residues formed during contact hole dry etching

We investigated the remote oxygen and hydrogen plasma cleaning to remove reactive ion etching (RIE) induced fluorocarbon and polymerized residues formed during the dry etching of the contact hole. After the RIE process, RIE induced fluorinated surface and/or fluorocarbon formation with a very homogeneous spatial distribution at several tens of Å depth from the surface was observed. The photoresist films before and after the RIE process showed a similar ashing behavior. Ashing rate generally increased with increasing the process temperature and plasma power. X-ray photoelectron spectroscopy and Auger electron spectroscopy analysis showed that the carbon and fluorine associated contamination can be effectively removed by oxygen plasma but it left a small amount of carbon residue and sacrificial silicon oxide. Hydrogen plasma cleaning was necessarily required to remove the residual carbon contaminants formed on the silicon surface after oxygen plasma ashing. Two step cleaning, oxygen plasma ashing with an intentionally left very thin photoresist layer and subsequent hydrogen plasma cleaning, is a very effective cleaning process to remove residual carbon and polymer without forming a SiO 2 layer. This article presents the systematic evaluation of the remote oxygen and hydrogen plasma cleaning of RIE induced polymer residues.