Transverse electron focusing, quantum electron kinetics, and the Hall effect in Bi

Transverse electron focusing, quantum electron kinetics, and the Hall effect in Bi

A novel technique for studying electron kinetics has been created by combining transverse electron focusing (TEF) with micro-contact resistance measurements. The technique provides a means to separate the contributions of bulk and surface electrons to magnetic field B singularities. We report observ...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 1996-02, Vol.218 (1), p.22-25
Hauptverfasser: Tsoi, V.S., Jaeger, M.D., Golding, B., Tsoi, M.V., Bass, J.
Format: Artikel
Sprache:eng
Schlagworte:
Electric resistance measurement
Electron beam lithography
Electrons
Focusing
Hall effect
Kinetic theory
Magnetic fields
Point contacts
Quantum theory
Single crystals
Surfaces
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Zusammenfassung:A novel technique for studying electron kinetics has been created by combining transverse electron focusing (TEF) with micro-contact resistance measurements. The technique provides a means to separate the contributions of bulk and surface electrons to magnetic field B singularities. We report observations of a phenomenon similar to the quantum Hall effect (QHE).
ISSN:0921-4526
1873-2135
DOI:10.1016/0921-4526(95)00549-8