Mixing and rectification properties of MIM diodes
In this work we study the nonlinearity of the I—V characteristic of a MIM diode, as a source of information of its fundamental properties. While tunneling theory explains at least qualitatively the behavior of the high resistance contacts ( R > 100 Ω), it falls short to explain the behavior of lo...
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Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 1996-02, Vol.218 (1), p.56-59 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | In this work we study the nonlinearity of the
I—V characteristic of a MIM diode, as a source of information of its fundamental properties. While tunneling theory explains at least qualitatively the behavior of the high resistance contacts (
R > 100 Ω), it falls short to explain the behavior of low resistance contacts. For low resistance contacts heating effects may become important. |
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ISSN: | 0921-4526 1873-2135 |
DOI: | 10.1016/0921-4526(95)00558-7 |