Mixing and rectification properties of MIM diodes

In this work we study the nonlinearity of the I—V characteristic of a MIM diode, as a source of information of its fundamental properties. While tunneling theory explains at least qualitatively the behavior of the high resistance contacts ( R > 100 Ω), it falls short to explain the behavior of lo...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 1996-02, Vol.218 (1), p.56-59
Hauptverfasser: Masalmeh, S.K., Stadermann, H.K.E., Korving, J.
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Sprache:eng
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Zusammenfassung:In this work we study the nonlinearity of the I—V characteristic of a MIM diode, as a source of information of its fundamental properties. While tunneling theory explains at least qualitatively the behavior of the high resistance contacts ( R > 100 Ω), it falls short to explain the behavior of low resistance contacts. For low resistance contacts heating effects may become important.
ISSN:0921-4526
1873-2135
DOI:10.1016/0921-4526(95)00558-7