Deposition behavior of SiO sub(2)-TiO sub(2) thin film by metalorganic chemical vapor deposition method
Metalorganic chemical vapor deposition was used to deposit SiO sub(2)-TiO sub(2) thin films, using an alkoxide source. The deposition mechanism of the mixed sources was analyzed by calculating the deposition rate of each oxide component in the thin films. A Lorentz-Lorenz model was used to attain th...
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Veröffentlicht in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2000-09, Vol.18 (5), p.2384-2388 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Metalorganic chemical vapor deposition was used to deposit SiO sub(2)-TiO sub(2) thin films, using an alkoxide source. The deposition mechanism of the mixed sources was analyzed by calculating the deposition rate of each oxide component in the thin films. A Lorentz-Lorenz model was used to attain the composition of the film for each component separation. |
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ISSN: | 0734-2101 |