Deposition behavior of SiO sub(2)-TiO sub(2) thin film by metalorganic chemical vapor deposition method

Metalorganic chemical vapor deposition was used to deposit SiO sub(2)-TiO sub(2) thin films, using an alkoxide source. The deposition mechanism of the mixed sources was analyzed by calculating the deposition rate of each oxide component in the thin films. A Lorentz-Lorenz model was used to attain th...

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2000-09, Vol.18 (5), p.2384-2388
Hauptverfasser: Lee, Si-Moo, Park, Jeong-Hoon, Hong, Kug-Sun, Cho, Woon-Jo, Kim, Dong-Lae
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Sprache:eng
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Zusammenfassung:Metalorganic chemical vapor deposition was used to deposit SiO sub(2)-TiO sub(2) thin films, using an alkoxide source. The deposition mechanism of the mixed sources was analyzed by calculating the deposition rate of each oxide component in the thin films. A Lorentz-Lorenz model was used to attain the composition of the film for each component separation.
ISSN:0734-2101