Large area ZnO films optimized for graded band-gap Cu(InGa)Se sub(2)-based thin-film mini-modules

Large area ZnO films optimized for graded band-gap Cu(InGa)Se sub(2)-based thin-film mini-modules

In this study, two deposition methods (i.e. MOCVD and sputtering methods) to prepare n-type ZnO window layers for CIGS-based thin-film solar cells are discussed. In order to make ZnO:Al transparent conductive oxide (TCO) films prepared by DC magnetron sputtering comparable to ZnO:B TCO prepared by M...

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Veröffentlicht in:Solar energy materials and solar cells 1997-12, Vol.49 (1-4), p.291-297
Hauptverfasser: Cooray, Nawalage F, Kushiya, Katsumi, Fujimaki, Atsushi, Sugiyama, Ichiro, Miura, Tadayuki, Okumura, Daisuke, Sato, Masao, Ooshita, Mineo, Yamase, Osamu
Format: Artikel
Sprache:eng
Schlagworte:
Band structure
Energy efficiency
Magnetron sputtering
Metallorganic chemical vapor deposition
Semiconducting selenium compounds
Semiconducting zinc compounds
Semiconductor device manufacture
Solar cells
Sputter deposition
Zinc oxide
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Zusammenfassung:In this study, two deposition methods (i.e. MOCVD and sputtering methods) to prepare n-type ZnO window layers for CIGS-based thin-film solar cells are discussed. In order to make ZnO:Al transparent conductive oxide (TCO) films prepared by DC magnetron sputtering comparable to ZnO:B TCO prepared by MOCVD, a new ZnO sputtering process is proposed by introducing a multilayer structure. Using these films, CIGS thin-film solar cells with efficiencies of greater than 14% have been fabricated with an active area of 3.2 cm super(2). This structure was adapted to fabricate CIGS thin-film mini-modules with efficiencies around 11% having aperture area of 50 cm super(2).
ISSN:0927-0248