Wavelength Division Multiplexing Based Photonic Integrated Circuits on Silicon-on-Insulator Platform

We review recent advances in the development of silicon photonic integrated circuits for high-speed and high-capacity interconnect applications. We present detailed design, fabrication, and characterization of a silicon integrated chip based on wavelength division multiplexing. In such a chip, an ar...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2010-01, Vol.16 (1), p.23-32
Hauptverfasser: Ansheng Liu, Ling Liao, Chetrit, Y., Basak, J., Nguyen, H., Rubin, D., Paniccia, M.
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Sprache:eng
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Zusammenfassung:We review recent advances in the development of silicon photonic integrated circuits for high-speed and high-capacity interconnect applications. We present detailed design, fabrication, and characterization of a silicon integrated chip based on wavelength division multiplexing. In such a chip, an array of eight high-speed silicon optical modulators is monolithically integrated with a silicon-based demultiplexer and a multiplexer. We demonstrate that each optical channel operates at 25 Gb/s. Our measurements suggest the integrated chip is capable of transmitting data at an aggregate rate of 200 Gb/s. This represents a key milestone on the way for fabricating terabit per second transceiver chips to meet the demand of future terascale computing.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2009.2033454