Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates

Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates

3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000°C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied...

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Hauptverfasser: Jegenyes, Nikoletta, Syväjärvi, Mikael, Lorenzzi, Jean, Beshkova, Milena, Birch, Jens, Ferro, Gabriel, Yakimova, Rositza
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container_volume 645-648
creator Jegenyes, Nikoletta
Syväjärvi, Mikael
Lorenzzi, Jean
Beshkova, Milena
Birch, Jens
Ferro, Gabriel
Yakimova, Rositza
description 3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000°C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied by reciprocal space map (RSM) which shows that double positions domains exists.
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title Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
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