Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates

Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates

3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000°C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied...

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Hauptverfasser: Syväjärvi, Mikael, Lorenzzi, Jean, Ferro, Gabriel, Yakimova, Rositza, Jegenyes, Nikoletta, Birch, Jens, Beshkova, Milena
Format: Tagungsbericht
Sprache:eng
Schlagworte:
TECHNOLOGY
TEKNIKVETENSKAP
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Zusammenfassung:3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000°C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied by reciprocal space map (RSM) which shows that double positions domains exists.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.645-648.183