Alkyl-Chain-Length-Independent Hole Mobility via Morphological Control with Poly(3-alkylthiophene) Nanofibers

The field‐effect transistor (FET) and diode characteristics of poly(3‐alkylthiophene) (P3AT) nanofiber layers deposited from nanofiber dispersions are presented and compared with those of layers deposited from molecularly dissolved polymer solutions in chlorobenzene. The P3AT n‐alkyl‐side‐chain length was varied from 4 to 9 carbon atoms. The hole mobilities are correlated with the interface and bulk morphology of the layers as determined by UV–vis spectroscopy, transmission electron microscopy (TEM) with selected area electron diffraction (SAED), atomic force microscopy (AFM), and polarized carbon K‐edge near edge X‐ray absorption fine structure (NEXAFS) spectroscopy. The latter technique reveals the average polymer orientation in the accumulation region of the FET at the interface with the SiO2 gate dielectric. The previously observed alkyl‐chain‐length‐dependence of the FET mobility in P3AT films results from differences in molecular ordering and orientation at the dielectric/semiconductor interface, and it is concluded that side‐chain length does not determine the intrinsic mobility of P3ATs, but rather the alkyl chain length of P3ATs influences FET diode mobility only through changes in interfacial bulk ordering in solution processed films. Field‐effect transistors (FETs) and diodes from poly(3‐alkylthiophene)s (P3ATs) with linear side chains ranging from 4 to 9 carbon atoms (A) are prepared from both nanofiber dispersions and chlorobenzene solutions. Nanofiber devices display alkyl‐side‐chain‐length‐independent hole mobilities. Morphological studies indicate that alkyl‐chain length influences P3AT FET (diode) mobility mainly through changes in interfacial (bulk) ordering in solution‐processed films.