High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

Nonvolatile memory ferroelectric thin‐film transistors (FeTFT) with P(VDF‐TrFE) polymer are demonstrated with both n‐channel ZnO and p‐channel pentacene. A high mobility of ≈1 cm2 V−1 s−1 and large memory window of ≈20 V are achieved through the organic ferroelectric– inorganic channel hybrid device of ZnO‐FeTFT. WRITE/ERASE states are clearly distinguished by ±20 V switching for ZnO‐ and pentacene‐FeTFTs.