Flexible Fullerene Field‐Effect Transistors Fabricated Through Solution Processing

C60‐based thin‐film transistors are fabricated through solution processing. On rigid indium tin oxide glass, the transistors display electron mobilities as high as 0.21 cm2 V−1 s−1 and a threshold voltage of 0.7 V, only slightly lower than those of organic thin‐film transistors prepared through vacuum deposition. On ITO‐coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates.