An analytical model for the cut off frequency and noise of AlGaN/GaN high electron mobility transistor (HEMTs)

An analytical model for cut off frequency and minimum noise of AlGaN/GaN in HEMTs has been developed that is capable of accurately predicting the effect of gate length on the cut off frequency and minimum noise. Salient futures of the model are incorporated of fully and partially occupied sub-bunds...

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Veröffentlicht in:	Journal of materials science and engineering 2009-12, Vol.3 (12), p.22-25
Hauptverfasser:	Yahyazadeh, R, Hashempour, Z, Kalafi, M, Aboulhasani, M R
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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