An analytical model for the cut off frequency and noise of AlGaN/GaN high electron mobility transistor (HEMTs)

An analytical model for cut off frequency and minimum noise of AlGaN/GaN in HEMTs has been developed that is capable of accurately predicting the effect of gate length on the cut off frequency and minimum noise. Salient futures of the model are incorporated of fully and partially occupied sub-bunds in the interface quantum well. In addition current in the barrier of AlGaN, traps density field in AlGaN, gate leakage, interface trap in the device are also taken into account. The calculated model results are in very good agreement with existing experimental data for Al(0.4)Ga(0.6)N/GaN HEMTs device.