ZnO TFT Devices Built on Glass Substrates
ZnO thin-film transistors (TFTs) were built on glass substrates. The device with a top gate configuration operates in the depletion mode. The ZnO channel was grown by metalorganic chemical vapor deposition (MOCVD) on glass at low temperature. SiO 2 was used as the gate dielectric. The TFT has an on/...
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Veröffentlicht in: | Journal of electronic materials 2008-09, Vol.37 (9), p.1237-1240 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | ZnO thin-film transistors (TFTs) were built on glass substrates. The device with a top gate configuration operates in the depletion mode. The ZnO channel was grown by metalorganic chemical vapor deposition (MOCVD) on glass at low temperature. SiO
2
was used as the gate dielectric. The TFT has an on/off ratio of ∼4.0 × 10
4
and a channel field-effect mobility of ∼4.0 cm
2
/V s. The average transmittance of the ZnO film in the visible wavelength is ∼80%. To compare the characteristics of the TFTs prepared by using a poly-ZnO and epitaxial-ZnO channel, an epi-ZnO TFT with the same configuration and dimensions was made on an r-Al
2
O
3
substrate. The epi-ZnO TFT shows higher field-effect mobility of ∼35 cm
2
/V s and on/off ratio of ∼10
8
. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-008-0457-9 |