ZnO TFT Devices Built on Glass Substrates

ZnO thin-film transistors (TFTs) were built on glass substrates. The device with a top gate configuration operates in the depletion mode. The ZnO channel was grown by metalorganic chemical vapor deposition (MOCVD) on glass at low temperature. SiO 2 was used as the gate dielectric. The TFT has an on/...

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Veröffentlicht in:Journal of electronic materials 2008-09, Vol.37 (9), p.1237-1240
Hauptverfasser: Zhu, J., Chen, H., Saraf, G., Duan, Z., Lu, Y., Hsu, S.T.
Format: Artikel
Sprache:eng
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Zusammenfassung:ZnO thin-film transistors (TFTs) were built on glass substrates. The device with a top gate configuration operates in the depletion mode. The ZnO channel was grown by metalorganic chemical vapor deposition (MOCVD) on glass at low temperature. SiO 2 was used as the gate dielectric. The TFT has an on/off ratio of ∼4.0 × 10 4 and a channel field-effect mobility of ∼4.0 cm 2 /V s. The average transmittance of the ZnO film in the visible wavelength is ∼80%. To compare the characteristics of the TFTs prepared by using a poly-ZnO and epitaxial-ZnO channel, an epi-ZnO TFT with the same configuration and dimensions was made on an r-Al 2 O 3 substrate. The epi-ZnO TFT shows higher field-effect mobility of ∼35 cm 2 /V s and on/off ratio of ∼10 8 .
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-008-0457-9