The development of nanocrystalline silicon for emerging microelectronic and nanoelectronic applications

Films consisting of nanometer-scale silicon crystals with narrow size distribution can be fabricated using a variety of techniques and are of technological interest for nonvolatile semiconductor memory applications. One fabrication technique based on the crystallization of thin amorphous silicon fil...

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Veröffentlicht in:JOM (1989) 2004-10, Vol.56 (10), p.20-25
Hauptverfasser: Striemer, Christopher C, Krishnan, Rishikesh, Fauchet, Philippe M
Format: Artikel
Sprache:eng
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Zusammenfassung:Films consisting of nanometer-scale silicon crystals with narrow size distribution can be fabricated using a variety of techniques and are of technological interest for nonvolatile semiconductor memory applications. One fabrication technique based on the crystallization of thin amorphous silicon films also shows potential for large-scale production of single isolated nanocrystals for future single-electron transistor and memory applications. A review of the most promising nanocrystalline silicon fabrication techniques and a discussion of current research in the area of crystallized thin-film amorphous silicon are presented in this article.
ISSN:1047-4838
1543-1851
DOI:10.1007/s11837-004-0283-3