The development of nanocrystalline silicon for emerging microelectronic and nanoelectronic applications
Films consisting of nanometer-scale silicon crystals with narrow size distribution can be fabricated using a variety of techniques and are of technological interest for nonvolatile semiconductor memory applications. One fabrication technique based on the crystallization of thin amorphous silicon fil...
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Veröffentlicht in: | JOM (1989) 2004-10, Vol.56 (10), p.20-25 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Films consisting of nanometer-scale silicon crystals with narrow size distribution can be fabricated using a variety of techniques and are of technological interest for nonvolatile semiconductor memory applications. One fabrication technique based on the crystallization of thin amorphous silicon films also shows potential for large-scale production of single isolated nanocrystals for future single-electron transistor and memory applications. A review of the most promising nanocrystalline silicon fabrication techniques and a discussion of current research in the area of crystallized thin-film amorphous silicon are presented in this article. |
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ISSN: | 1047-4838 1543-1851 |
DOI: | 10.1007/s11837-004-0283-3 |