STRUCTURAL CHARACTERIZATION OF CdTe/Si(111) QUANTUM DOTS

STRUCTURAL CHARACTERIZATION OF CdTe/Si(111) QUANTUM DOTS

We report on the structural characterization of ultra thin CdTe layers and quantum dots grown by Hot Wall Epitaxy on [111] oriented silicon substrates. Atomic Force Microscopy shows that this system follows the Volmer-Weber growth mode, while specular and Grazing Incidence X-ray Diffraction data rev...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:29th International Conference on the Physics of Semiconductors 2008-07, Vol.1199, p.7-8
Hauptverfasser: Suela, J, Ferreira, S O, Abramof, E, Ribeiro, I R B, Malachias, A
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report on the structural characterization of ultra thin CdTe layers and quantum dots grown by Hot Wall Epitaxy on [111] oriented silicon substrates. Atomic Force Microscopy shows that this system follows the Volmer-Weber growth mode, while specular and Grazing Incidence X-ray Diffraction data reveal [111] oriented islands undertaken epitaxial growth even in despite of large lattice mismatch, of almost 20%. Measurements of (220) CdTe reflections in a PHI scan indicate an in-plane 30 rotation of a small percentage of de islands regarding the substrate lattice.
ISSN:0094-243X