A study of the damage on FIB-prepared TEM samples of AlxGa1−xAs

The damage produced by focused ion beam (FIB) milling on a TEM sample of AlGaAs crystals has been studied. The damage observed on the sidewall of an AlGaAs transmission electron microscopy (TEM) sample was an amorphous layer. The thickness of the amorphous layer linearly increased with an increase in FIB accelerating voltage from 5 to 30 kV. The thickness of the amorphous layer of AlxGa1−xAs was constant at 3 nm and was independent of the Al concentration x when the accelerating voltage was below 5 kV. The thickness of the amorphous layer of AlxGa1−xAs decreased with an increase in Al concentration x when the accelerating voltage was above 5 kV. FIB milling at 5 kV effectively minimizes the thickness of the amorphous layer and also provides flat sidewalls on multilayer samples of AlxGa1−xAs that are prepared for TEM and scanning electron microscopy (SEM).