Surface structure of plasma-etched (211)B HgCdTe
The surface of (211)B HgCdTe has been studied by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). RHEED analysis of the as-grown Hg-rich molecular beam epitaxy (MBE) (211)B HgCdTe suggests the surface reconstructs by additional Hg incorporation. The plasma-etche...
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Veröffentlicht in: | Journal of electronic materials 2005-06, Vol.34 (6), p.726-732 |
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creator | BENSON, J. D STOLTZ, A. J DINAN, J. H VARESI, J. B ALMEIDA, L. A SMITH, E. P. G JOHNSON, S. M MARTINKA, M KALECZYC, A. W MARKUNAS, J. K BOYD, P. R |
description | The surface of (211)B HgCdTe has been studied by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). RHEED analysis of the as-grown Hg-rich molecular beam epitaxy (MBE) (211)B HgCdTe suggests the surface reconstructs by additional Hg incorporation. The plasma-etched (211)B HgCdTe surface is crystalline but stepped and facetted. RHEED analysis indicates asymmetric pyramids (base dimensions [asymptotically =] 0.5 × 1.1 nm) are formed to minimize surface Hg concentration. The AFM examination of plasma-etched (211)B HgCdTe reveals oriented mesoscopic features. [PUBLICATION ABSTRACT] |
doi_str_mv | 10.1007/s11664-005-0011-y |
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D ; STOLTZ, A. J ; DINAN, J. H ; VARESI, J. B ; ALMEIDA, L. A ; SMITH, E. P. G ; JOHNSON, S. M ; MARTINKA, M ; KALECZYC, A. W ; MARKUNAS, J. K ; BOYD, P. R</creator><creatorcontrib>BENSON, J. D ; STOLTZ, A. J ; DINAN, J. H ; VARESI, J. B ; ALMEIDA, L. A ; SMITH, E. P. G ; JOHNSON, S. M ; MARTINKA, M ; KALECZYC, A. W ; MARKUNAS, J. K ; BOYD, P. R</creatorcontrib><description>The surface of (211)B HgCdTe has been studied by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). RHEED analysis of the as-grown Hg-rich molecular beam epitaxy (MBE) (211)B HgCdTe suggests the surface reconstructs by additional Hg incorporation. The plasma-etched (211)B HgCdTe surface is crystalline but stepped and facetted. RHEED analysis indicates asymmetric pyramids (base dimensions [asymptotically =] 0.5 × 1.1 nm) are formed to minimize surface Hg concentration. The AFM examination of plasma-etched (211)B HgCdTe reveals oriented mesoscopic features. 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RHEED analysis indicates asymmetric pyramids (base dimensions [asymptotically =] 0.5 × 1.1 nm) are formed to minimize surface Hg concentration. The AFM examination of plasma-etched (211)B HgCdTe reveals oriented mesoscopic features. 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RHEED analysis indicates asymmetric pyramids (base dimensions [asymptotically =] 0.5 × 1.1 nm) are formed to minimize surface Hg concentration. The AFM examination of plasma-etched (211)B HgCdTe reveals oriented mesoscopic features. [PUBLICATION ABSTRACT]</abstract><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1007/s11664-005-0011-y</doi><tpages>7</tpages></addata></record> |
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subjects | Applied sciences Arrays Diffraction Electronics Exact sciences and technology Materials Mercury cadmium telluride Molecular beam epitaxy Plasma etching Sensors |
title | Surface structure of plasma-etched (211)B HgCdTe |
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