Simultaneous optimization of charge-carrier mobility and optical gain in semiconducting polymer films
Efficient light emission combined with high charge-carrier mobility has proven elusive for polymer semiconductors, because high mobility is typically achieved using approaches that quench luminescence. A new strategy, introducing a limited number of more-effective hopping sites between otherwise rel...
Gespeichert in:
Veröffentlicht in: | Nature materials 2008-05, Vol.7 (5), p.376-380 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Efficient light emission combined with high charge-carrier mobility has proven elusive for polymer semiconductors, because high mobility is typically achieved using approaches that quench luminescence. A new strategy, introducing a limited number of more-effective hopping sites between otherwise relatively isolated polymer chains, achieves this aim.
The combination of efficient light emission and high charge-carrier mobility has thus far proved elusive for polymer semiconductors, with high mobility typically achieved by cofacial
π
-electron system to
π
-electron system interactions that quench exciton luminescence
1
,
2
. We report a new strategy, comprising the introduction of a limited number of more effective hopping sites between otherwise relatively isolated, and thus highly luminescent, polyfluorene chains. Our approach results in polymer films with large mobility (
μ
≈3–6×10
−2
cm
2
V
−1
s
−1
) and simultaneously excellent light-emission characteristics. These materials are expected to be of interest for light-emitting transistors
3
, light-emitting diode sources for optical communications
4
and may offer renewed hope for electrically pumped laser action
2
,
5
,
6
. In the last context, optically pumped distributed feedback lasers comprising one-dimensional etched silica grating structures coated with polymer have state-of-the-art excitation thresholds (as low as 30 W cm
−2
(0.1 nJ per pulse or 0.3 μJ cm
−2
) for 10 Hz, 12 ns, 390 nm excitation) and slope efficiencies (up to 11%). |
---|---|
ISSN: | 1476-1122 1476-4660 |
DOI: | 10.1038/nmat2165 |