Room-Temperature Ultraviolet Nanowire Nanolasers

Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural...

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Veröffentlicht in:Science (American Association for the Advancement of Science) 2001-06, Vol.292 (5523), p.1897-1899
Hauptverfasser: Huang, Michael H., Mao, Samuel, Feick, Henning, Yan, Haoquan, Wu, Yiying, Kind, Hannes, Weber, Eicke, Russo, Richard, Yang, Peidong
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Sprache:eng
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Zusammenfassung:Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources. These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.
ISSN:0036-8075
0193-4511
1095-9203
DOI:10.1126/science.1060367