In-situ spectroscopic ellipsometry of HgCdTe

In-situ spectroscopic ellipsometry of HgCdTe

An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was us...

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Veröffentlicht in:Journal of electronic materials 1996-08, Vol.25 (8), p.1406-1410
Hauptverfasser: Benson, J D, Cornfeld, A B, Martinka, M, Singley, K M
Format: Artikel
Sprache:eng
Schlagworte:
Dielectric properties
Mercury cadmium telluride
Molecular beam epitaxy
Semiconductors
Spectrum analysis
Thin films
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Zusammenfassung:An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process. [PUBLICATION ABSTRACT]
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02655042