Dependence of cathodoluminescence on layer resistance applied for measurement of thin-layer sheet resistance

Dependence of cathodoluminescence on layer resistance applied for measurement of thin-layer sheet resistance

The dependence of spatially and spectrally resolved cathodoluminescence in a scanning electron microscope on resistances in semiconductor structures, especially on the layer resistance, is reported. This previously unstudied dependence is utilized for thin-layer sheet-resistance measurement. The met...

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Veröffentlicht in:Journal of microscopy (Oxford) 2010-03, Vol.237 (3), p.304-307
Hauptverfasser: CZERWINSKI, A, PLUSKA, M, RATAJCZAK, J, SZERLING, A, KąTCKI, J
Format: Artikel
Sprache:eng
Schlagworte:
Cathodoluminescence
lasers
semiconductors
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Zusammenfassung:The dependence of spatially and spectrally resolved cathodoluminescence in a scanning electron microscope on resistances in semiconductor structures, especially on the layer resistance, is reported. This previously unstudied dependence is utilized for thin-layer sheet-resistance measurement. The method is illustrated by an assessment of lateral confinements in semiconductor-laser heterostructures.
ISSN:0022-2720
1365-2818
DOI:10.1111/j.1365-2818.2009.03248.x