Tolerancing of diffraction-limited Kirkpatrick-Baez synchrotron beamline optics for extreme-ultraviolet metrology
The recent interest in extreme-ultraviolet (EUV) lithography has led to the development of an array of at-wavelength metrologies implemented on synchrotron beamlines. These beamlines commonly use Kirkpatrick-Baez (K-B) systems consisting of two perpendicular, elliptically bent mirrors in series. To...
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Veröffentlicht in: | Applied Optics 2001-08, Vol.40 (22), p.3703-3709 |
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Sprache: | eng |
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Zusammenfassung: | The recent interest in extreme-ultraviolet (EUV) lithography has led to the development of an array of at-wavelength metrologies implemented on synchrotron beamlines. These beamlines commonly use Kirkpatrick-Baez (K-B) systems consisting of two perpendicular, elliptically bent mirrors in series. To achieve high-efficiency focusing into a small spot, unprecedented fabrication and assembly tolerance is required of these systems. Here we present a detailed error-budget analysis and develop a set of specifications for diffraction-limited performance for the K-B optic operating on the EUV interferometry beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. The specifications are based on code v modeling tools developed explicitly for these optical systems. Although developed for one particular system, the alignment sensitivities presented here are relevant to K-B system designs in general. |
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ISSN: | 1559-128X 0003-6935 1539-4522 |
DOI: | 10.1364/ao.40.003703 |