Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics

Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics

We have optimized plasma-enhanced chemical vapor deposition (PECVD) of SiN-based antireflection (AR) coatings with special consideration for the short-wavelength (

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Bibliographische Detailangaben
Veröffentlicht in:Applied Optics 1997-10, Vol.36 (30), p.7826-7837
Hauptverfasser: Doshi, P, Jellison, G E, Rohatgi, A
Format: Artikel
Sprache:eng
Schlagworte:
ABSORPTION
ANTIREFLECTION COATINGS
CHEMICAL VAPOR DEPOSITION
DISPERSION RELATIONS
ELLIPSOMETRY
INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS
MATERIALS SCIENCE
REFRACTIVE INDEX
SILICON NITRIDES
ULTRAVIOLET SPECTRA
VISIBLE SPECTRA
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Beschreibung
Zusammenfassung:We have optimized plasma-enhanced chemical vapor deposition (PECVD) of SiN-based antireflection (AR) coatings with special consideration for the short-wavelength (
ISSN:1559-128X
0003-6935
1539-4522
DOI:10.1364/ao.36.007826