Energy transfer at optical frequencies to silicon-on-insulator structures

The refractive-index distribution that is intrinsic to the silicon-on-insulator (SOI) material system makes it possible for optical-frequency guided waves to be confined by the SOI silicon layer. The same refractive-index distribution is unusual among nonmetals in that it is possible for those SOI g...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Optics letters 2001-09, Vol.26 (18), p.1421-1423
Hauptverfasser: Soller, B J, Stuart, H R, Hall, D G
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The refractive-index distribution that is intrinsic to the silicon-on-insulator (SOI) material system makes it possible for optical-frequency guided waves to be confined by the SOI silicon layer. The same refractive-index distribution is unusual among nonmetals in that it is possible for those SOI guided waves to interact strongly with nearby optical-frequency radiators, absorbers, and scatterers (e.g., atoms, molecules, and nanoparticles). We calculate the guided-mode excitation efficiency for an exterior particle near the SOI surface and show that it can attain values greater than 80% under appropriate conditions, thus showing that the SOI waveguide system is an attractive platform for the study of optical-frequency surface interactions.
ISSN:0146-9592
1539-4794
DOI:10.1364/ol.26.001421