Energy transfer at optical frequencies to silicon-on-insulator structures
The refractive-index distribution that is intrinsic to the silicon-on-insulator (SOI) material system makes it possible for optical-frequency guided waves to be confined by the SOI silicon layer. The same refractive-index distribution is unusual among nonmetals in that it is possible for those SOI g...
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Veröffentlicht in: | Optics letters 2001-09, Vol.26 (18), p.1421-1423 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | The refractive-index distribution that is intrinsic to the silicon-on-insulator (SOI) material system makes it possible for optical-frequency guided waves to be confined by the SOI silicon layer. The same refractive-index distribution is unusual among nonmetals in that it is possible for those SOI guided waves to interact strongly with nearby optical-frequency radiators, absorbers, and scatterers (e.g., atoms, molecules, and nanoparticles). We calculate the guided-mode excitation efficiency for an exterior particle near the SOI surface and show that it can attain values greater than 80% under appropriate conditions, thus showing that the SOI waveguide system is an attractive platform for the study of optical-frequency surface interactions. |
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ISSN: | 0146-9592 1539-4794 |
DOI: | 10.1364/ol.26.001421 |