Tuning high-power laser diodes with as much as 0.38 W of power and M(2) = 1.2 over a range of 32 nm with 3-GHz bandwidth
Gain-guided diode lasers usually have emission wavelengths determined by the manufacturing process, with typically 0.5-1-nm bandwidth. Furthermore, their beam quality is rather poor. We show that external cavities allow for tunable narrow-bandwidth operation of gain-guided diode lasers. At the same...
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Veröffentlicht in: | Optics letters 2002-11, Vol.27 (22), p.1995-1997 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Gain-guided diode lasers usually have emission wavelengths determined by the manufacturing process, with typically 0.5-1-nm bandwidth. Furthermore, their beam quality is rather poor. We show that external cavities allow for tunable narrow-bandwidth operation of gain-guided diode lasers. At the same time the beam quality is drastically improved; almost diffraction-limited light of more than 200 mW has been achieved over the whole tuning range from 910 to 942 nm with narrow bandwidth. |
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ISSN: | 0146-9592 |
DOI: | 10.1364/OL.27.001995 |