1-W average power levels and tunability from a diode-pumped 2.94-microm Er:YAG oscillator
A tunable Er:YAG laser, side pumped by a quasi-cw InGaAs diode array, generates > 500 mW of power at 2.936 microm. The cavity is a 4-cm plano-concave resonator that uses total internal reflection on the pump face of the Er:YAG crystal to couple the diode emission into the resonating modes of the...
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Veröffentlicht in: | Optics letters 1994-10, Vol.19 (20), p.1627-1629 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A tunable Er:YAG laser, side pumped by a quasi-cw InGaAs diode array, generates > 500 mW of power at 2.936 microm. The cavity is a 4-cm plano-concave resonator that uses total internal reflection on the pump face of the Er:YAG crystal to couple the diode emission into the resonating modes of the oscillator. Tuning is accomplished by angle tuning a 300-microm-thick YAG étalon. The tuning range is 2.933-2.939 microm. Thermal lensing limits the duty factor to 4% or 8%, depending on the Er:YAG crystal thickness (2 or 1 mm). A 2.5-cm-long resonator operates at an 11% duty factor and generates 1.3 W of average power. |
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ISSN: | 0146-9592 |