Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core−Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy

Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core−Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy

We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core−shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-c...

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Veröffentlicht in:Nano letters 2009-09, Vol.9 (9), p.3349-3353
Hauptverfasser: Parkinson, Patrick, Joyce, Hannah J, Gao, Qiang, Tan, Hark Hoe, Zhang, Xin, Zou, Jin, Jagadish, Chennupati, Herz, Laura M, Johnston, Michael B
Format: Artikel
Sprache:eng
Schlagworte:
Arsenicals - chemistry
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electric Conductivity
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Gallium - chemistry
Materials science
Materials Testing
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanotechnology - methods
Nanowires - chemistry
Particle Size
Photochemistry
Physics
Quantum wires
Surface Properties
Temperature
Terahertz Spectroscopy - methods
Time Factors
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Zusammenfassung:We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core−shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a larger-bandgap material is shown to reduce the density of surface traps by 82%, thereby enhancing the charge conductivity.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl9016336