Nonlinear response of low-background extrinsic silicon detectors. 1: A phenomenological model

Extrinsic photoconductive silicon detectors operated in the infrared at low-background flux and high bias voltage respond nonlinearly to strongly modulated illumination. They can exhibit a dc nonlinear response even at low bias. We present a simple mathematical prescription for computing the output...

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Veröffentlicht in:Applied Optics 1981-03, Vol.20 (6), p.1000-1004
Hauptverfasser: Zachor, A S, Huppi, E R
Format: Artikel
Sprache:eng
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Zusammenfassung:Extrinsic photoconductive silicon detectors operated in the infrared at low-background flux and high bias voltage respond nonlinearly to strongly modulated illumination. They can exhibit a dc nonlinear response even at low bias. We present a simple mathematical prescription for computing the output corresponding to a given input signal. This phenomenological model predicts results in reasonable agreement with measured response data for square wave input modulation.
ISSN:1559-128X
0003-6935
1539-4522
DOI:10.1364/AO.20.001000