Nonlinear response of low-background extrinsic silicon detectors. 1: A phenomenological model
Extrinsic photoconductive silicon detectors operated in the infrared at low-background flux and high bias voltage respond nonlinearly to strongly modulated illumination. They can exhibit a dc nonlinear response even at low bias. We present a simple mathematical prescription for computing the output...
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Veröffentlicht in: | Applied Optics 1981-03, Vol.20 (6), p.1000-1004 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Extrinsic photoconductive silicon detectors operated in the infrared at low-background flux and high bias voltage respond nonlinearly to strongly modulated illumination. They can exhibit a dc nonlinear response even at low bias. We present a simple mathematical prescription for computing the output corresponding to a given input signal. This phenomenological model predicts results in reasonable agreement with measured response data for square wave input modulation. |
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ISSN: | 1559-128X 0003-6935 1539-4522 |
DOI: | 10.1364/AO.20.001000 |