Gate-defined graphene double quantum dot and excited state spectroscopy

A double quantum dot is formed in a graphene nanoribbon device using three top gates. These gates independently change the number of electrons on each dot and tune the interdot coupling. Transport through excited states is observed in the weakly coupled double dot regime. We extract from the measure...

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Veröffentlicht in:	Nano letters 2010-05, Vol.10 (5), p.1623-1627
Hauptverfasser:	Liu, Xing Lan, Hug, Dorothee, Vandersypen, Lieven M. K
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Cross-disciplinary physics: materials science rheology Electronics Equipment Design Equipment Failure Analysis Exact sciences and technology Fullerenes and related materials diamonds, graphite Graphite - chemistry Materials science Materials Testing Molecular electronics, nanoelectronics Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanostructures - chemistry Nanostructures - ultrastructure Nanotechnology - instrumentation Particle Size Physics Quantum Dots Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal Processing, Computer-Assisted - instrumentation Specific materials
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Beschreibung
Zusammenfassung:	A double quantum dot is formed in a graphene nanoribbon device using three top gates. These gates independently change the number of electrons on each dot and tune the interdot coupling. Transport through excited states is observed in the weakly coupled double dot regime. We extract from the measurements all relevant capacitances of the double dot system, as well as the quantized level spacing.
ISSN:	1530-6984 1530-6992
DOI:	10.1021/nl9040912