Soluble Semiconductors AAsSe2 (A = Li, Na) with a Direct-Band-Gap and Strong Second Harmonic Generation: A Combined Experimental and Theoretical Study

AAsSe2 (A = Li, Na) have been identified as a new class of polar direct-band gap semiconductors. These I−V−VI2 ternary alkali-metal chalcoarsenates have infinite single chains of (1/∞)[AsQ2 −] derived from corner-sharing pyramidal AsQ3 units with stereochemically active lone pairs of electrons on ar...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of the American Chemical Society 2010-03, Vol.132 (10), p.3484-3495
Hauptverfasser: Bera, Tarun K, Jang, Joon I, Song, Jung-Hwan, Malliakas, Christos D, Freeman, Arthur J, Ketterson, John B, Kanatzidis, Mercouri G
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:AAsSe2 (A = Li, Na) have been identified as a new class of polar direct-band gap semiconductors. These I−V−VI2 ternary alkali-metal chalcoarsenates have infinite single chains of (1/∞)[AsQ2 −] derived from corner-sharing pyramidal AsQ3 units with stereochemically active lone pairs of electrons on arsenic. The conformations and packing of the chains depend on the structure-directing alkali metals. This results in at least four different structural types for the Li1−x Na x AsSe2 stoichoimetry (α-LiAsSe2, β-LiAsSe2, γ-NaAsSe2, and δ-NaAsSe2). Single-crystal X-ray diffraction studies showed an average cubic NaCl-type structure for α-LiAsSe2, which was further demonstrated to be locally distorted by pair distribution function (PDF) analysis. The β and γ forms have polar structures built of different (1/∞)[AsSe2 −] chain conformations, whereas the δ form has nonpolar packing. A wide range of direct band gaps are observed, depending on composition: namely, 1.11 eV for α-LiAsSe2, 1.60 eV for LiAsS2, 1.75 eV for γ-NaAsSe2, 2.23 eV for NaAsS2. The AAsQ2 materials are soluble in common solvents such as methanol, which makes them promising candidates for solution processing. Band structure calculations performed with the highly precise screened-exchange sX-LDA FLAPW method confirm the direct-gap nature and agree well with experiment. The polar γ-NaAsSe2 shows very large nonlinear optical (NLO) second harmonic generation (SHG) response in the wavelength range of 600−950 nm. The theoretical studies confirm the experimental results and show that γ-NaAsSe2 has the highest static SHG coefficient known to date, 337.9 pm/V, among materials with band gaps larger than 1.0 eV.
ISSN:0002-7863
1520-5126
DOI:10.1021/ja9094846