Optical characterization of grating surface emitting semiconductor lasers
We describe an apparatus for measuring the optical characteristics of grating coupled surface emitting semiconductor lasers. These measurements include far and near field measurements, spectrum, and total power. The far field can be determined with an absolute accuracy of 0.01 degrees .
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Veröffentlicht in: | Applied Optics 1990-06, Vol.29 (18), p.2718-2721 |
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container_title | Applied Optics |
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creator | WAARTS, R. G |
description | We describe an apparatus for measuring the optical characteristics of grating coupled surface emitting semiconductor lasers. These measurements include far and near field measurements, spectrum, and total power. The far field can be determined with an absolute accuracy of 0.01 degrees . |
doi_str_mv | 10.1364/AO.29.002718 |
format | Article |
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subjects | 426002 - Engineering- Lasers & Masers- (1990-) Charged-particle beams Electromagnetism electron and ion optics EMISSION SPECTRA ENGINEERING Exact sciences and technology Fundamental areas of phenomenology (including applications) GRATINGS LASERS PHASE STABILITY Physics POWER SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS SOLID STATE LASERS SPECTRA STABILITY |
title | Optical characterization of grating surface emitting semiconductor lasers |
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