Optical characterization of grating surface emitting semiconductor lasers

We describe an apparatus for measuring the optical characteristics of grating coupled surface emitting semiconductor lasers. These measurements include far and near field measurements, spectrum, and total power. The far field can be determined with an absolute accuracy of 0.01 degrees .

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Veröffentlicht in:Applied Optics 1990-06, Vol.29 (18), p.2718-2721
1. Verfasser: WAARTS, R. G
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container_title Applied Optics
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creator WAARTS, R. G
description We describe an apparatus for measuring the optical characteristics of grating coupled surface emitting semiconductor lasers. These measurements include far and near field measurements, spectrum, and total power. The far field can be determined with an absolute accuracy of 0.01 degrees .
doi_str_mv 10.1364/AO.29.002718
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ispartof Applied Optics, 1990-06, Vol.29 (18), p.2718-2721
issn 0003-6935
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source Alma/SFX Local Collection; Optica Publishing Group Journals
subjects 426002 - Engineering- Lasers & Masers- (1990-)
Charged-particle beams
Electromagnetism
electron and ion optics
EMISSION SPECTRA
ENGINEERING
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
GRATINGS
LASERS
PHASE STABILITY
Physics
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA
STABILITY
title Optical characterization of grating surface emitting semiconductor lasers
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