Low frequency oscillations in semi-insulating GaAs: A nonlinear analysis

We have observed low frequency current oscillations in a semi-insulating GaAs sample grown by low temperature molecular beam epitaxy. For this, an experimental setup proper to measure high impedance samples with small external noise was developed. Spontaneous oscillations in the current were observe...

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Veröffentlicht in:Chaos (Woodbury, N.Y.) N.Y.), 2003-06, Vol.13 (2), p.457-466
Hauptverfasser: Rubinger, R. M., da Silva, R. L., de Oliveira, A. G., Ribeiro, G. M., Albuquerque, H. A., Rodrigues, W. N., Moreira, M. V. B.
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Sprache:eng
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Zusammenfassung:We have observed low frequency current oscillations in a semi-insulating GaAs sample grown by low temperature molecular beam epitaxy. For this, an experimental setup proper to measure high impedance samples with small external noise was developed. Spontaneous oscillations in the current were observed for some bias conditions. Although measurements were carried out from room temperature down to liquid helium, the dynamical analysis was carried out around 200 K where the signal to noise ratio was fairly favorable. To increase the data quality we have also used a noise reduction algorithm suitably developed for nonlinear systems. We observed attractors having low embedding dimension, limit cycle bifurcations, and chaotic behavior characteristic of nonlinear dynamical processes in route to chaos. Attractor reconstruction, Poincaré sections, Lyapunov exponents, and correlation dimension were also analyzed.
ISSN:1054-1500
1089-7682
DOI:10.1063/1.1558080