Fractional Quantum Hall Effect in Organic Molecular Semiconductors

High-quality crystals of the organic molecular semiconductors tetracene and pentacene were used to prepare metal-insulator-semiconductor (MIS) structures exhibiting hole and electron mobilities exceeding 104square centimeters per volt per second. The carrier concentration in the channel region of th...

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Veröffentlicht in:Science (American Association for the Advancement of Science) 2000-06, Vol.288 (5475), p.2338-2340
Hauptverfasser: Schön, J. H., Ch. Kloc, Batlogg, B.
Format: Artikel
Sprache:eng
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Zusammenfassung:High-quality crystals of the organic molecular semiconductors tetracene and pentacene were used to prepare metal-insulator-semiconductor (MIS) structures exhibiting hole and electron mobilities exceeding 104square centimeters per volt per second. The carrier concentration in the channel region of these ambipolar field-effect devices was controlled by the applied gate voltage. Well-defined Shubnikov-de Haas oscillations and quantized Hall plateaus were observed for two-dimensional carrier densities in the range of 1011per square centimeter. Fractional quantum Hall states were observed in tetracene crystals at temperatures as high as ∼2 kelvin.
ISSN:0036-8075
1095-9203
DOI:10.1126/science.288.5475.2338