Silicon electro-optic modulators using p-i-n diodes embedded 10-micron-diameter microdisk resonators

We demonstrate a silicon electro-optic modulator using a 10-micron-diameter microdisk resonator with a laterally integrated p-i-n diode surrounding essentially the entire microdisk. Our experiments reveal a modulation bandwidth of 510 MHz using a Q ~ 16,900 resonance mode under a square-wave drive v...

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Veröffentlicht in:Optics express 2006-07, Vol.14 (15), p.6851-6857
Hauptverfasser: Zhou, Linjie, Poon, Andrew W
Format: Artikel
Sprache:eng
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Zusammenfassung:We demonstrate a silicon electro-optic modulator using a 10-micron-diameter microdisk resonator with a laterally integrated p-i-n diode surrounding essentially the entire microdisk. Our experiments reveal a modulation bandwidth of 510 MHz using a Q ~ 16,900 resonance mode under a square-wave drive voltage of ~0.9 V forward bias and ~-6 V reverse bias.
ISSN:1094-4087
1094-4087
DOI:10.1364/oe.14.006851