GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate

GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate

A room-temperature continuous-wave operation under optical pumping was demonstrated with GaInAsP/InP membrane buriedheterostructure (BH) distributed-feedback (DFB) laser directly bonded on an SOI substrate. A threshold pump power of 2.8 mW and a sub-mode suppression ratio of 28 dB were obtained with...

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Veröffentlicht in:Optics express 2006-09, Vol.14 (18), p.8184-8188
Hauptverfasser: Maruyama, Takeo, Okumura, Tadashi, Sakamoto, Shinichi, Miura, Koji, Nishimoto, Yoshifumi, Arai, Shigehisa
Format: Artikel
Sprache:eng
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Zusammenfassung:A room-temperature continuous-wave operation under optical pumping was demonstrated with GaInAsP/InP membrane buriedheterostructure (BH) distributed-feedback (DFB) laser directly bonded on an SOI substrate. A threshold pump power of 2.8 mW and a sub-mode suppression ratio of 28 dB were obtained with a cavity length of 120 microm and a stripe width of 2 microm.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.14.008184