Next generation 1.5 microm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers

Next generation 1.5 microm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers

Mesa-structuring of InGaAs/InAlAs photoconductive layers is performed employing a chemical assisted ion beam etching (CAIBE) process. Terahertz photoconductive antennas for 1.5 microm operation are fabricated and evaluated in a time domain spectrometer. Order-of-magnitude improvements versus planar...

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Veröffentlicht in:Optics express 2010-02, Vol.18 (3), p.2296-2301
Hauptverfasser: Roehle, H, Dietz, R J B, Hensel, H J, Böttcher, J, Künzel, H, Stanze, D, Schell, M, Sartorius, B
Format: Artikel
Sprache:eng
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Zusammenfassung:Mesa-structuring of InGaAs/InAlAs photoconductive layers is performed employing a chemical assisted ion beam etching (CAIBE) process. Terahertz photoconductive antennas for 1.5 microm operation are fabricated and evaluated in a time domain spectrometer. Order-of-magnitude improvements versus planar antennas are demonstrated in terms of emitter power, dark current and receiver sensitivity.
ISSN:1094-4087
DOI:10.1364/OE.18.002296