Characterization of silicon nanowire by use of full-vectorial finite element method
We have carried out a rigorous H-field-based full-vectorial modal analysis and used it to characterize, more accurately, the abrupt dielectric discontinuity of a high index contrast optical waveguide. The full-vectorial H and E fields and the Poynting vector profiles are described in detail. It has...
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Veröffentlicht in: | Applied Optics 2010-06, Vol.49 (16), p.3173-3181 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We have carried out a rigorous H-field-based full-vectorial modal analysis and used it to characterize, more accurately, the abrupt dielectric discontinuity of a high index contrast optical waveguide. The full-vectorial H and E fields and the Poynting vector profiles are described in detail. It has been shown through this work that the mode profile of a circular silicon nanowire is not circular and also contains a strong axial field component. The single-mode operation, vector field profiles, modal hybridness, modal ellipticity, and group velocity dispersion of this silicon nanowire are also presented. |
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ISSN: | 0003-6935 2155-3165 1539-4522 |
DOI: | 10.1364/AO.49.003173 |