Characterization of silicon nanowire by use of full-vectorial finite element method

We have carried out a rigorous H-field-based full-vectorial modal analysis and used it to characterize, more accurately, the abrupt dielectric discontinuity of a high index contrast optical waveguide. The full-vectorial H and E fields and the Poynting vector profiles are described in detail. It has...

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Veröffentlicht in:Applied Optics 2010-06, Vol.49 (16), p.3173-3181
Hauptverfasser: Kejalakshmy, N, Agrawal, Arti, Aden, Yasin, Leung, D M H, Rahman, B M A, Grattan, K T V
Format: Artikel
Sprache:eng
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Zusammenfassung:We have carried out a rigorous H-field-based full-vectorial modal analysis and used it to characterize, more accurately, the abrupt dielectric discontinuity of a high index contrast optical waveguide. The full-vectorial H and E fields and the Poynting vector profiles are described in detail. It has been shown through this work that the mode profile of a circular silicon nanowire is not circular and also contains a strong axial field component. The single-mode operation, vector field profiles, modal hybridness, modal ellipticity, and group velocity dispersion of this silicon nanowire are also presented.
ISSN:0003-6935
2155-3165
1539-4522
DOI:10.1364/AO.49.003173