Nanowire transistors without junctions

All existing transistors are based on the use of semiconductor junctions formed by introducing dopant atoms into the semiconductor material. As the distance between junctions in modern devices drops below 10 nm, extraordinarily high doping concentration gradients become necessary. Because of the law...

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Veröffentlicht in:	Nature nanotechnology 2010-03, Vol.5 (3), p.225-229
Hauptverfasser:	Colinge, Jean-Pierre, Lee, Chi-Woo, Afzalian, Aryan, Akhavan, Nima Dehdashti, Yan, Ran, Ferain, Isabelle, Razavi, Pedram, O'Neill, Brendan, Blake, Alan, White, Mary, Kelleher, Anne-Marie, McCarthy, Brendan, Murphy, Richard
Format:	Artikel
Sprache:	eng
Schlagworte:	639/925/357/1016 639/925/357/995 639/925/927/1007 639/925/927/356 Chemistry and Materials Science Electrodes Fabrication Materials Science Nanotechnology Nanotechnology and Microengineering Nanowires Silicon Transistors
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