Performance evaluation of a hand-held, semiconductor (CdZnTe)-based gamma camera

We have designed and developed a small field of view gamma camera, the eZ SCOPE, based on use of a CdZnTe semiconductor. This device utilises proprietary signal processing technology and an interface to a computer-based imaging system. The purpose of this study was to evaluate the performance of the eZ scope in comparison with currently employed gamma camera technology. The detector is a single wafer of 5-mm-thick CdZnTe that is divided into a 16x16 array (256 pixels). The sensitive area of the detector is a square of dimension 3.2 cm. Two parallel-hole collimators are provided with the system and have a matching (256 hole) pattern to the CdZnTe detector array: a low-energy, high-resolution parallel-hole (LEHR) collimator fabricated of lead and a low-energy, high-sensitivity parallel-hole (LEHS) collimator fabricated of tungsten. Performance measurements and the data analysis were done according to the procedures of the NEMA standard. We also studied the long-term stability of the system with continuous use and variations in ambient temperature. Results were as follows. INTRINSIC ENERGY RESOLUTION: 8.6% FWHM at 141 keV.LINEARITY: There was excellent linearity between the observed photopeaks and the known gamma ray energies for the given isotopes. INTRINSIC SYSTEM UNIFORMITY: For the central field of view, the integral uniformity and the differential uniformity were, respectively, 1.6% and 1.3% with the LEHR collimator and 1.9% and 1.2% with the LEHS collimator. SYSTEM SPATIAL RESOLUTION: The FWHM measurements made at the surface of the collimator were 2.2 mm (LEHR) and 2.9 mm (LEHS).CONTRAST TEST: The average S/N ratios (i.e. counts in the irradiated pixel divided by counts in the surrounding pixels) for the inner ring pixels (8)/outer ring pixels (16) using the LEHS collimator and LEHR collimator were 3.2%/0.2% and 3.7%/0.3%, respectively. COUNT RATE CHARACTERISTICS: We could not determine the maximum count rate and the 20% loss count rate from these data because the plateau was not reached while using the solutions measured. SYSTEM SENSITIVITY: The average acquisitions were 11,052 cpm/MBq (LEHR) and 28,590 cpm/MBq (LEHS). TEMPERATURE DEPENDENCE: The system displayed minimum corresponding shift in cps with temperature changes in the measured temperature range. We designed and developed a semiconductor-based gamma camera using CdZnTe. The basic performance of this camera compares favourably with the existing gamma camera technology that is deployed in the