Gd(1.33)Pt(3)(Al,Si)(8) and Gd(0.67)Pt(2)(Al,Si)(5): two structures containing a disordered Gd/Al layer grown in liquid aluminum

Gd(1.33)Pt(3)Al(8) was synthesized by the combination of Gd and Pt in excess liquid aluminum. Addition of silicon resulted in the incorporation of a small amount of this element into the material to form the isostructural Gd(1.33)Pt(3)Al(7)Si. Both compounds grow as rodlike crystals with hexagonal cross section. The structures were refined in the rhombohedral space group R(-)3m, with cell parameters a = 4.3359(6) A and c = 38.702(8) A for the ternary and a = 4.3280(8) A and c = 38.62(1) A for the quaternary compound. The structure is comprised of stuffed arsenic-like PtAl(2) layers and disordered Gd/Al layers. Analysis of the hk0 zone reflections indicate the presence of an a = radical 3a supercell, but the structure is not ordered along c, as revealed by the highly diffuse reflections in the 0kl zone photos. Therefore, the compounds are disordered variants of the Gd(4)Pt(9)Al(24) type. Magnetic susceptibility studies reveal antiferromagnetic transitions at 15 K for the ternary and 7 K for the quaternary compound. Variation of the reactant ratio produces a different structure comprised of the same structural blocks, including the disordered Gd/Al layer. Gd(0.67)Pt(2)Al(5) and its quaternary analogue Gd(0.67)Pt(2)Al(4)Si form in the hexagonal system P6(3)/mmc with cell parameters a = 4.2907(3) A and c = 16.388(2) A for the ternary and a = 4.2485(6) A and c = 16.156(3) A for the quaternary compound.