Dissociation of a product of a surface reaction in the gas phase: XeF2 reaction with Si
Xenon difluoride interacts with Si(100)2 x 1 by atom abstraction, whereby a dangling bond abstracts a F atom from XeF2, scattering the complementary XeF. Partitioning of the reaction exothermicity produces sufficient XeF rovibrational excitation for dissociation to occur. The resulting F and Xe atom...
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Veröffentlicht in: | Physical review letters 2004-05, Vol.92 (18), p.188302-188302 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Xenon difluoride interacts with Si(100)2 x 1 by atom abstraction, whereby a dangling bond abstracts a F atom from XeF2, scattering the complementary XeF. Partitioning of the reaction exothermicity produces sufficient XeF rovibrational excitation for dissociation to occur. The resulting F and Xe atoms are shown to arise from dissociation of XeF in the gas phase by demonstrating that the angle-resolved velocity distributions of F, Xe, and XeF conserve momentum, energy, and mass. This experiment documents the first observation of dissociation of a surface reaction product in the gas phase. |
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ISSN: | 0031-9007 |
DOI: | 10.1103/PhysRevLett.92.188302 |