290-fs pulses from a semiconductor disk laser

Transform-limited pulses as short as 290 fs at 1036 nm are generated by a diode-pumped semiconductor disk laser. The all-semiconductor laser employs a graded-gap-barrier design in the gain section. A fast saturable absorber mirror serves as a passive mode-locker. No further elements for internal or...

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Veröffentlicht in:	Optics express 2008-04, Vol.16 (8), p.5770-5775
Hauptverfasser:	Klopp, Peter, Saas, Florian, Zorn, Martin, Weyers, Markus, Griebner, Uwe
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer Simulation Computer-Aided Design Equipment Design Equipment Failure Analysis Lasers, Semiconductor Lenses Models, Theoretical Oscillometry - instrumentation Oscillometry - methods Signal Processing, Computer-Assisted - instrumentation
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Transform-limited pulses as short as 290 fs at 1036 nm are generated by a diode-pumped semiconductor disk laser. The all-semiconductor laser employs a graded-gap-barrier design in the gain section. A fast saturable absorber mirror serves as a passive mode-locker. No further elements for internal or external dispersion control are required.
ISSN:	1094-4087 1094-4087
DOI:	10.1364/OE.16.005770