Effect of optical spin injection on ferromagnetically coupled Mn spins in the III-V magnetic alloy semiconductor (Ga,Mn)As

We report on the new type of photoinduced magnetization in ferromagnetic (Ga,Mn)As thin films. Optically generated spin-polarized holes change the orientation of ferromagnetically coupled Mn spins and cause a large change in magnetization, being 15% of the saturation magnetization, without the application of a magnetic field. The memorization effect has also been found as a trace after the photoinduced magnetization. The observed results suggest that a small amount of nonequilibrium carrier spins can cause collective rotation of Mn spins presumably through the p-d exchange interaction.